J4 ›› 2012, Vol. 25 ›› Issue (3): 58-61.doi: 10.3976/j.issn.1002-4026.2012.03.012

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Impact of tube PECVD process on the refracitve index of silicon nitride thin film

 REN Xian-Kun1, MA Yu-Ying2, ZHANG Li-Ming1, LIU Peng1, JIANG Yan-Sen1, XU Zhen-Hua1, JIA He-Shun1, CHENG Liang1, ZHANG Chun-Yan1   

  1. 1.Shandong Linuo Solar Power Holdings Co. Ltd., Jinan 250103, China;
    2.Shandong Kaiwen Vocational College of Science and Technology, Jinan 250200, China
  • Received:2012-03-27 Online:2012-06-20 Published:2012-06-20

Abstract:

      Refraction index is an important parameter reflecting film composition and density. It also reflects preparation quality of thin film, which directly affects the transformation efficiency of a solar cell. This paper investigated the impact of radio frequency power, chamber pressure, substrate temperature and the ratio of saline and ammonia on the refraction index of silicon nitride thin film deposited on a c-Si solar cell. We analyze the reason that refractive index of azotized silicon thin film changes with different deposition conditions.

Key words: refractive index, densification, conversion efficiency, Silicon nitride, PECVD

CLC Number: 

  • O484.4+1