基于拉曼光谱和光学二次谐波的二硒化锡结构研究

doi:10.3976/j.issn.1002-4026.2017.01.005

Abstract

Abstract:

The photoelectric properties of twodimensional layered semiconductor materials, especially for those with a few atomic layers, are closely related to their crystal structures. Thus, the critical question is to select the proper characterization. In this article, the tin diselenide with different layers has been obtained by means of mechanical exfoliation, and the characteristics of the crystal structure have been studied by optical second harmonic generation and Raman spectrum. By using second harmonic generation, the crystal axis of tin diselenide was confirmed accurately and the effect of different thickness on second harmonic generation was analyzed, providing a purely optical method of determining the orientation of crystallographic axes, as well as offering the possibility to discover other nonlinear optical properties of tin diselenide. By Raman spectroscopy, it is found that the interlayer vibration mode was sensitive to the changes of thickness and temperature, thus tin diselenide could be applied to the temperature detection in situ within a large range.

Key words: Raman spectroscopy, tin diselenide, second harmonic generation, crystal structure

CLC Number:

O482.3

ZHANG Shuai, SHI Ying,SHI Jia, SUN Min，WU Qian，LIU Xin-feng,LIU Mei . Structural studieson Raman spectroscopy and optical second harmonic generation based tin diselenide[J].SHANDONG SCIENCE, 2017, 30(1): 26-32.

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Structural studieson Raman spectroscopy and optical second harmonic generation based tin diselenide

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