J4 ›› 2013, Vol. 26 ›› Issue (6): 14-18.doi: 10.3976/j.issn.1002-4026.2013.06.004
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FANG Xiang, LI Yu-Guo, WANG Yu, LIU Yong-Feng
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Abstract:
SnO2 nanowires were prepared on a singlecrystal Au splashed Si substrate at 1 000℃ by CVD method with the mixture of SnO2 powder and toner as source material and highpurity N2 as carrier gas. We characterized its structure and morphology by SEM and XRD. We also analyzed its luminescence property by photoluminescence spectra. Results show that annealing time has certain influence on its morphology but does not affect its rutile structure. The prepared SnO2 nanowire has higher crystal quality and its growth follows VLS mechanism.
Key words: CVD, SnO2 nanowire, growth mechanism
CLC Number:
O484.5
FANG Xiang, LI Yu-Guo, WANG Yu, LIU Yong-Feng. Preparation and structure characterization of SnO2 nanowires[J].J4, 2013, 26(6): 14-18.
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