蒲公英状氧化镓纳米线的制备与表征

doi:10.3976/j.issn.1002-4026.2014.06.019

Abstract

Abstract: We prepared Ga2O3 nanowires by heating Ga2O3 powder and Aucoated Si(111) substrates at 1 200℃ with different time. We discovered a new nucleation process in this experiment. We further characterized the structure and appearance of the nanowires by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and XRay Diffraction (XRD). Large number of dandelionlike Ga2O3 nanowires with diameters of about 200 ~ 330 nm formed on entire surface of those substrates which was observed by SEM. Energydispersive spectrometry (EDS) based observation shows that the products are pure Ga2O3. Experimental results reveal that growth time impacts their morphology and microstructure. We eventually address their growth mechanism.

Key words: growth mechanism, dandelionlike nanowire, characterization, a new process of nucleation

CLC Number:

O484.5

LIU Yong-feng,LI Yu-guo,WANG Yu-ping. Preparation and characterization of dandelionlike Ga2O3 nanowires[J].SHANDONG SCIENCE, 2014, 27(6): 108-112.

References

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Preparation and characterization of dandelionlike Ga2O3 nanowires

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