Abstract:

        We grew InGaN/GaN multiple quantum well structure (MQWs) on a cplane sapphire substrate with metal organic chemical vapor deposition, and investigated its photoluminescence (PL) property. Results show that two main emission components exist in its PL spectrum. They are considered to be generated from two separate phases lowIn content InGaN matrix and highIn content quasiquantum dots (QDs) in InGaN well layers. Their integral PL intensities largely depend on measurement temperature and excitation power. Lower miscibility between GaN and InN is believed to result in the phase separation of InGaN well layers. Transport process of photogenerated carriers exists between the two phases.

Key words: photoluminescence, InGaN matrix, quantum dot, phase separation