基于Nd:YAG/V:YAG键合晶体的1 338 nm微片激光器研究

doi:10.3976/j.issn.1002-4026.2017.02.018

Abstract

Abstract:

In this paper, based on Nd:YAG/V:YAG bonded crystal, the output characteristics of an passively Q-switched microchip laser operating at 1 338 nm was demonstrated under cw and quasicw LD endpumping. In the cw pumping region, stable Q-switched pulse was obtained with the maximum output power of 0.73 W and a pulse width of 139 ns. Under the quasicw pumping region, the phenomenon of passive modelock Q-switched was achieved, the maximum output power was 1.01 W and the pulse width was about 80 ns. Among them there was modelocked pulse train in the Q-switched pulse with single pulse width of 70 ps. The experiment results show that Nd:YAG/V:YAG bonded crystal have the advantages in obtaining 1 338 nm compact pulse laser with high output power and quasicw pumping mode can greatly decrease the thermal effects and ensure high laser output power.

Key words: bonded crystal, microchip laser, Nd:YAG/V:YAG

CLC Number:

TN248.1

LIU Qian-hui, AN Zhen-ni, ZHANG Qian-qian, LI Jian. Research on Nd:YAG/V:YAG bonded crystal based microchip laser operating at 1 338 nm[J].SHANDONG SCIENCE, 2017, 30(2): 121-125.

References

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Research on Nd:YAG/V:YAG bonded crystal based microchip laser operating at 1 338 nm

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