溅射时间对脉冲激光沉积制备β-FeSi2薄膜的影响

J4 ›› 2011, Vol. 24 ›› Issue (1): 55-60.

溅射时间对脉冲激光沉积制备β-FeSi₂薄膜的影响

马玉英, 刘爱华, 刘玫, 许士才, 侯娟, 郭进进

山东师范大学物理与电子科学学院，山东济南 250014

出版日期:2011-02-20 发布日期:2011-02-20
基金资助:
国家自然科学基金理论物理专项(11047161)

Effects of sputtering time on the structure and morphology of β-FeSi₂film made with pulsed laser deposition

MA Yu-Yang, LIU Ai-Hua, LIU Mei, XU Shi-Cai, HOU Juan, GUO Jin-Jin

College of Physics and Electronics,Shandong Normal University,Jinan 250014,China

Online:2011-02-20 Published:2011-02-20

摘要/Abstract

摘要：

本文基于脉冲激光沉积 (PLD)方法及热退火处理方式，利用输出波长为1064 nm的Nd:YAG脉冲激光器在P型Si (100) 衬底上生长了均匀的单相 β-FeSi₂薄膜。采用X 射线衍射(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)分析技术，研究了β-FeSi₂薄膜的结构、组分、结晶质量和表面形貌。结果发现，在其他相同沉积条件下，随着溅射时间的增加，薄膜晶化程度、颗粒大小和形状、表面粗糙度都发生规律性变化，通过分析比较得出，在本实验条件下溅射时间为40 min制备的 β-FeSi₂薄膜结晶质量较好。

关键词: 脉冲激光沉积 ( PLD ), &beta, -FeSi₂薄膜, 溅射时间

Abstract:

We made uniform single phase β-FeSi₂ films on Si (100) substrate with a Nd:YAG pulsed laser of 1064 nm (output wavelength), pulsed laser deposition (PLD) and thermal annealing process. We further investigated the structure and surface morphology with atomic force microscope (AFM),scanning electron microscope (SEM) and X-ray diffraction (XRD) method. Experimental results show the crystallization degree, size and shape of the grains and surface roughness are all regularly changed with the increase of sputtering time. We discovered that 40 minutes is the optimal sputtering time under the present experimental conditions after comparing the different sputtering time.

Key words: PLD, β-FeSi₂ films, sputtering time

中图分类号:

O484.4

马玉英, 刘爱华, 刘玫, 许士才, 侯娟, 郭进进. 溅射时间对脉冲激光沉积制备β-FeSi₂薄膜的影响[J]. J4, 2011, 24(1): 55-60.

MA Yu-Yang, LIU Ai-Hua, LIU Mei, XU Shi-Cai, HOU Juan, GUO Jin-Jin. Effects of sputtering time on the structure and morphology of β-FeSi₂film made with pulsed laser deposition[J]. J4, 2011, 24(1): 55-60.

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溅射时间对脉冲激光沉积制备β-FeSi₂薄膜的影响

Effects of sputtering time on the structure and morphology of β-FeSi₂film made with pulsed laser deposition

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