J4 ›› 2013, Vol. 26 ›› Issue (4): 37-41.doi: 10.3976/j.issn.1002-4026.2013.04.009

• 论文 • 上一篇    下一篇

生长温度对S掺杂ZnO特性的影响

高秀梅   

  1. 山东职业学院, 山东 济南 250104
  • 收稿日期:2013-04-12 出版日期:2013-08-20 发布日期:2013-08-20
  • 作者简介:高秀梅(1968-),女,讲师,理学、工学双硕士,研究方向为物理光学及电力电子和电力传动。Email:1601626673@qq.com
  • 基金资助:

    山东省教育厅科技研究计划项目(J11LG86)

Impacts of growth temperature on the properties of hydrothermal synthesized S doped ZnO

 GAO Xiu-Mei   

  1. Shandong Polytechnic, Jinan 250104, China
  • Received:2013-04-12 Online:2013-08-20 Published:2013-08-20

摘要:

      S掺杂在ZnO材料中引入Zn空位,会对可见光的发光起到增强的作用。利用水热法制备了纤锌矿结构的S掺杂ZnO,随着生长温度的提高,ZnO晶粒的尺寸由1.2 μm提高到了2.3 μm,样品由低温下各晶粒的均匀生长变为某些晶粒的优先生长模式。在荧光光谱中,紫外和可见发光均得到了增强,且可见光发光的增强要明显大于紫外发光,这表明生长温度的提高会改善晶体的质量,同时S的存在也将会使样品中的Zn空位迅速增多。S掺杂ZnO导致的可见光发光的增强可以使ZnO材料在可见光发光器件中得进一步到的应用。

关键词: ZnO, 水热法, 生长机理, 光学特性

Abstract:

     The doping of sulfur can introduce Zn vacancies into ZnO material, which will enhance visible emission. We prepared Sdoped ZnO wurtzite structures with hydrothermal method. The size of ZnO crystals increases from 1.2 μm to 2.3 μm with the increase of resultant temperature. Crystal growth of ZnO changes from uniform growth at lower temperature to preferential growth of some crystals at higher temperature. Ultraviolet and visible emissions are all enhanced, but the enhancement of visible emission is significantly greater than that of ultraviolet emission. This demonstrates that the increase of growth temperature will improve the quality of crystals. The existence of sulfur will soon increase Zn vacancies. The result shows a potential application of ZnO material in a visible emission device.

Key words: ZnO, hydrothermal method, growth mechanism, optical property

中图分类号: 

  • TB303

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