关键词: 化学气相沉积, SnO₂纳米线, 生长机制

Abstract:

SnO₂ nanowires were prepared on a singlecrystal Au splashed Si substrate at 1 000℃ by CVD method with the mixture of SnO₂ powder and toner as source material and highpurity N₂ as carrier gas. We characterized its structure and morphology by SEM and XRD. We also analyzed its luminescence property by photoluminescence spectra. Results show that annealing time has certain influence on its morphology but does not affect its rutile structure. The prepared SnO₂ nanowire has higher crystal quality and its growth follows VLS mechanism.

Key words: CVD, SnO₂ nanowire, growth mechanism