Bi掺杂调控Ge0.8Mn0.1Pb0.1Te合金热电性能的研究

doi:10.3976/j.issn.1002-4026.2025171

山东科学 ›› 2026, Vol. 39 ›› Issue (2): 20-26.doi: 10.3976/j.issn.1002-4026.2025171

Bi掺杂调控Ge_0.8Mn_0.1Pb_0.1Te合金热电性能的研究

孙兵¹(), 王麒栋¹^,², 张军祥¹, 孟振振¹, 陈婷婷¹

¹ 潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室, 山东潍坊 261061
² 济南市X射线光学重点实验室, 山东济南 250002

收稿日期:2025-12-03 修回日期:2026-01-03 出版日期:2026-04-20 上线日期:2026-04-03
作者简介:孙兵(1988—),男,博士,教授,研究方向为热电材料,E-mail: wywdsunbing@wfu.edu.cn
基金资助:
国家自然科学基金(12204355);国家自然科学基金(52272210);山东省自然科学基金(ZR2023QE282);山东省自然科学基金(ZR2022QA018);山东省自然科学基金(ZR2022QA009);山东省氮化镓材料与应用重点实验室;济南市X射线光学重点实验室开放课题(2024JKLXOOP003)

Thermoelectric properties of Bi-doped Ge_0.8Mn_0.1Pb_0.1Te alloys

SUN Bing¹(), WANG Qidong¹^,², ZHANG Junxiang¹, MENG Zhenzhen¹, CHEN Tingting¹

¹ School of Physics and Electronic Information, Shandong Provincial Key Laboratory of Gallium Nitride Materials and Applications, Weifang University, Weifang 261061, China
² Jinan Key Laboratory of X-ray Optics, Jinan 250002, China

Received:2025-12-03 Revised:2026-01-03 Published:2026-04-20 Online:2026-04-03

摘要/Abstract

摘要：

GeTe合金作为中温区极具潜力的热电材料,因其优异的热电性能而备受关注。本研究采用真空熔炼结合热压烧结工艺,成功制备出Ge_0.8-_xMn_0.1Pb_0.1Bi_xTe系列合金。结果表明,Bi元素的引入显著降低了合金的载流子浓度,进而增加了塞贝克系数。随着Bi掺杂浓度的增加,合金的晶体结构由菱面体相逐渐转变为立方相。同时,Bi的引入加剧了GeTe合金内部的晶格畸变,增强了声子散射,降低了晶格热导率,且由于电阻率的升高,电子热导率显著降低。在773 K时,Ge_0.78Mn_0.1Pb_0.1Bi_0.02Te合金的热导率降低至1.34 W/(m·K)。最终,该合金在中低温下的热电优值得到提高,同时在高温区保持了较高的热电优值,从而获得了高达0.80的平均热电优值。

关键词: 热电材料, 元素掺杂, GeTe, 热导率, 热电优值

Abstract:

GeTe-based alloys have attracted considerable attention as promising mid-temperature thermoelectric materials owing to their excellent performance. In this study, a series of Ge_0.8-_xMn_0.1Pb_0.1Bi_xTe alloys were synthesized by vacuum melting followed by hot-press sintering. The results demonstrate that Bi incorporation significantly enhances the Seebeck coefficient. With increasing Bi content, the crystal structure gradually evolves from a rhombohedral to a cubic phase. Simultaneously, Bi-induced lattice distortion intensifies phonon scattering, leading to a marked reduction in lattice thermal conductivity, while the electronic thermal conductivity also decreases as a result of reduced electrical conductivity. At 773 K, the total thermal conductivity of Ge_0.8-_xMn_0.1Pb_0.1Bi_0.02Te reaches a low value of 1.34 W/(m·K). Consequently, the alloys exhibit enhanced thermoelectric figure of merit (Z_T) values in the low-to-mid temperature range while maintaining high Z_Tat elevated temperatures, yielding a high average thermoelectric figure of merit (Z_T_,avg) of 0.80.

Key words: thermoelectric materials, doping, GeTe, thermal conductivity, thermoelectric figure of merit

中图分类号:

TB34

孙兵, 王麒栋, 张军祥, 孟振振, 陈婷婷. Bi掺杂调控Ge_0.8Mn_0.1Pb_0.1Te合金热电性能的研究[J]. 山东科学, 2026, 39(2): 20-26.

SUN Bing, WANG Qidong, ZHANG Junxiang, MENG Zhenzhen, CHEN Tingting. Thermoelectric properties of Bi-doped Ge_0.8Mn_0.1Pb_0.1Te alloys[J]. Shandong Science, 2026, 39(2): 20-26.

图/表 5

参考文献 33

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Bi掺杂调控Ge_0.8Mn_0.1Pb_0.1Te合金热电性能的研究

Thermoelectric properties of Bi-doped Ge_0.8Mn_0.1Pb_0.1Te alloys

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Bi掺杂调控Ge0.8Mn0.1Pb0.1Te合金热电性能的研究

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Bi掺杂调控Ge_0.8Mn_0.1Pb_0.1Te合金热电性能的研究

Thermoelectric properties of Bi-doped Ge_0.8Mn_0.1Pb_0.1Te alloys